Invention Grant
- Patent Title: Gate formation with varying work function layers
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Application No.: US16853912Application Date: 2020-04-21
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Publication No.: US11239345B2Publication Date: 2022-02-01
- Inventor: Jin-Dah Chen , Stan Chen , Han-Wei Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L27/092 ; H01L21/8238
Abstract:
A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.
Public/Granted literature
- US20200251578A1 Gate Formation with Varying Work Function Layers Public/Granted day:2020-08-06
Information query
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