Invention Grant
- Patent Title: Method of fabricating a field effect transistor
-
Application No.: US16697558Application Date: 2019-11-27
-
Publication No.: US11239374B2Publication Date: 2022-02-01
- Inventor: Sylvain Barraud , Joris Lacord
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1872094 20181129
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
A method for producing an FET transistor includes producing a transistor channel, comprising at least one semiconductor nanowire arranged on a substrate and comprising first and second opposite side faces; producing at least two dummy gates, each arranged against one of the first and second side faces of the channel; etching a first of the two dummy gates, forming a first gate location against the first side face of the channel; producing a first gate in the first gate location and against the first side face of the channel; etching a second of the two dummy gates, forming a second gate location against the second side face of the channel; and producing a second gate in the second gate location and against the second side face of the channel.
Public/Granted literature
- US20200176613A1 METHOD OF FABRICATING A FIELD EFFECT TRANSISTOR Public/Granted day:2020-06-04
Information query
IPC分类:
