Invention Grant
- Patent Title: Superluminescent halide perovskite light-emitting diodes with a sub-bandgap turn-on voltage
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Application No.: US15626759Application Date: 2017-06-19
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Publication No.: US11239429B1Publication Date: 2022-02-01
- Inventor: Zhibin Yu , Junqiang Li , Xin Shan
- Applicant: The Florida State University Research Foundation, Inc.
- Applicant Address: US FL Tallahassee
- Assignee: The Florida State University Research Foundation, Inc.
- Current Assignee: The Florida State University Research Foundation, Inc.
- Current Assignee Address: US FL Tallahassee
- Agency: Eversheds Sutherland (US) LLP
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/50 ; H01L51/56
Abstract:
An emissive perovskite ternary composite thin film comprising a perovskite material, an ionic-conducting polymer and an ionic-insulating polymer is provided. Additionally, a single-layer LEDs is described using a composite thin film of organometal halide perovskite (Pero), an ionic-conducting polymer (ICP) and an ionic-insulating polymer (IIP). The LEDs with Pero-ICP-IIP composite thin films exhibit a low turn-on voltage of about 1.9V (defined at 1 cd m−2 luminance) and a luminance of about 600,000 cd m−2.
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