Invention Grant
- Patent Title: Terahertz element and semiconductor device
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Application No.: US16619440Application Date: 2018-06-26
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Publication No.: US11239547B2Publication Date: 2022-02-01
- Inventor: Toshikazu Mukai , Jaeyoung Kim , Tomoichiro Toyama
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2017-125370 20170627,JPJP2017-202021 20171018
- International Application: PCT/JP2018/024179 WO 20180626
- International Announcement: WO2019/004204 WO 20190103
- Main IPC: H01Q1/38
- IPC: H01Q1/38 ; H01L23/66 ; H01L23/00 ; H01L27/06 ; H01L29/88 ; H01Q9/16

Abstract:
A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.
Public/Granted literature
- US20200168985A1 TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE Public/Granted day:2020-05-28
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