Invention Grant
- Patent Title: Ruggedness protection circuit
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Application No.: US16743638Application Date: 2020-01-15
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Publication No.: US11239803B2Publication Date: 2022-02-01
- Inventor: Parvez Daruwalla , David Kovac
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Steinfl + Bruno LLP
- Main IPC: H03F1/52
- IPC: H03F1/52 ; H03F3/193 ; H03F1/26 ; H03F1/02

Abstract:
Various methods and circuital arrangements for protection of an RF amplifier are presented. According to one aspect, the RF amplifier is part of switchable RF paths that may include at least one path with one or more attenuators or switches that can be used during normal operation to define different modes of operation of the at least one path. An RF level detector monitors a level of an RF signal during operation of any one of the switchable RF paths and may control the attenuators or switches to provide an attenuation of the RF signal according to a desired level of protection at an input and/or output of the RF amplifier. According to another aspect, the RF level detector may control a switch to force the RF signal through a different switchable RF path.
Public/Granted literature
- US20210083631A1 RUGGEDNESS PROTECTION CIRCUIT Public/Granted day:2021-03-18
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