Invention Grant
- Patent Title: IR pixel reconfigurable in DI or BDI mode
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Application No.: US17082083Application Date: 2020-10-28
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Publication No.: US11240459B2Publication Date: 2022-02-01
- Inventor: Jean-Alain Nicolas
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1912366 20191105
- Main IPC: H04N5/378
- IPC: H04N5/378 ; H04N5/3745 ; G01J5/06 ; H04N5/33 ; H04N5/369

Abstract:
External biasing control unit for a reading circuit of an infrared photodetector element, the control unit being able to adopt: a first configuration wherein it sends a first set of biasing signals to a first stage of the reading circuit so that this first stage adopts a first operating mode corresponding to a first biasing mode of the photodetector, in particular a direct injection mode, a second configuration wherein it sends a second set of biasing signals to said first stage, the signals in the second set being designed so that said first stage adopts a second operating mode corresponding to a second biasing mode of the photodetector, in particular a buffer direct injection mode.
Public/Granted literature
- US20210136306A1 IR PIXEL RECONFIGURABLE IN DI OR BDI MODE Public/Granted day:2021-05-06
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