Invention Grant
- Patent Title: Force sensor and force sensor manufacturing method
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Application No.: US16332677Application Date: 2017-08-14
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Publication No.: US11243130B2Publication Date: 2022-02-08
- Inventor: Yoshitada Isono
- Applicant: National University Corporation Kobe University
- Applicant Address: JP Hyogo
- Assignee: National University Corporation Kobe University
- Current Assignee: National University Corporation Kobe University
- Current Assignee Address: JP Hyogo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2016-179650 20160914
- International Application: PCT/JP2017/029290 WO 20170814
- International Announcement: WO2018/051703 WO 20180322
- Main IPC: G01L5/16
- IPC: G01L5/16 ; G01L5/1627 ; G01L1/22

Abstract:
A force sensor that is a MEMS sensor includes: a plurality of detectors arranged in a circle and each including an element disposed in part of a surface layer of a base component including a semiconductor; an elastic component including resin and disposed sandwiching the plurality of detectors from both sides; and a probe that is connected to an end of each of the plurality of detectors at a center portion of the circle in which the plurality of detectors are arranged, extends up to a position that protrudes from the elastic component, and to which force is applicable directly without passing the elastic component.
Public/Granted literature
- US20210285834A1 FORCE SENSOR AND FORCE SENSOR MANUFACTURING METHOD Public/Granted day:2021-09-16
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