Invention Grant
- Patent Title: Semiconductor device and method of manufacturing
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Application No.: US16727616Application Date: 2019-12-26
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Publication No.: US11243353B2Publication Date: 2022-02-08
- Inventor: Ying-Hao Kuo , Tien-Yu Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/122 ; G02B6/124 ; G02B6/136 ; G02B6/42 ; G02B5/18 ; H01L21/311 ; H01L21/768

Abstract:
A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.
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