Invention Grant
- Patent Title: Reflective mask and fabricating method thereof
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Application No.: US16656227Application Date: 2019-10-17
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Publication No.: US11243461B2Publication Date: 2022-02-08
- Inventor: Tsiao-Chen Wu , Pei-Cheng Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/80 ; G03F1/40
Abstract:
A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.
Public/Granted literature
- US1643920A Double-hung window sash Public/Granted day:1927-09-27
Information query
