The present invention relates to a method for transforming measurement data of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range from first surroundings into second surroundings. The method includes the steps of: (a) determining the measurement data for the photolithographic mask in the first surroundings, wherein the measurement data are influenced by the effects of internal stresses on the photolithographic mask; (b) ascertaining at least one change in the measurement data during the transition from the first surroundings into the second surroundings, in which change the effects of the internal stresses on the photolithographic mask are at least partly compensated; and (c) correcting the measurement data determined in step (a) with the at least one change in the measurement data ascertained in step (b).