Invention Grant
- Patent Title: Memory system for changing cell mode of memory block and operation method thereof
-
Application No.: US16575601Application Date: 2019-09-19
-
Publication No.: US11243700B2Publication Date: 2022-02-08
- Inventor: Geu-Rim Lee , Young-Gyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2018-0150799 20181129
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02

Abstract:
A memory system may include: a memory device including a plurality of memory blocks which includes memory cells supporting a two-or-more-level cell (XLC) mode and a single level cell (SLC) mode; and a controller suitable for managing data of the memory device and controlling the memory device, wherein, when memory usage of the memory device is greater than or equal to a first threshold value, the controller selects one or more free memory blocks as one or more victim memory blocks, switches a mode of each victim memory block to the XLC mode, and moves data stored in a source memory block to the one or more victim memory blocks, wherein the source memory block, among the plurality of memory blocks, has data stored therein driven in the SLC mode.
Public/Granted literature
- US20200174667A1 MEMORY SYSTEM AND OPERATION METHOD THEREOF Public/Granted day:2020-06-04
Information query