Invention Grant
- Patent Title: Write operation circuit, semiconductor memory, and write operation method
-
Application No.: US17313003Application Date: 2021-05-06
-
Publication No.: US11244709B2Publication Date: 2022-02-08
- Inventor: Liang Zhang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201911021470.5 20191025
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
Embodiments provide a write operation circuit, a semiconductor memory, and write operation method. The write operation circuit includes: a data determination module that determines whether to flip an input data of the semiconductor memory depending on the number of high data bits in the input data so as to generate a flip flag data and a first intermediate data; a data buffer module that determines whether to flip a global bus according to a second intermediate data, where the second intermediate data is an inverted data of the first intermediate data; a data receiving module that decodes the global bus data according to the flip flag data and writes the decoded data into a memory bank of the semiconductor, where the decoding including determining whether to flip the global bus data; and a precharge module that sets the initial state of the global bus to low.
Public/Granted literature
- US20210257011A1 WRITE OPERATION CIRCUIT, SEMICONDUCTOR MEMORY, AND WRITE OPERATION METHOD Public/Granted day:2021-08-19
Information query