A method for calibrating read threshold voltages includes receiving, from at least one memory die, a number of page bits corresponding to a number of read operations performed on a page associated with the at least one memory die. The method further includes determining voltage bins for each bit of the number of page bits. The method further includes determining, for each voltage bin, a bit error rate. The method further includes adjusting read threshold voltages associated with the at least one memory die using the bite error rate for each voltage bin.