Invention Grant
- Patent Title: Stacking inductor device
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Application No.: US16157502Application Date: 2018-10-11
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Publication No.: US11244783B2Publication Date: 2022-02-08
- Inventor: Hsiao-Tsung Yen
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corporation
- Current Assignee: Realtek Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Locke Lord LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW107100540 20180105
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F19/04 ; H01F17/00

Abstract:
A stacking inductor device includes a first inductor unit and a second inductor unit disposed above first inductor unit. First inductor unit includes a first and a second wire. First wire is disposed on a first side of first inductor unit. Second wire is disposed on a second side of first inductor unit. A first opening of second wire is disposed on a first side of stacking inductor device. Second inductor unit includes a third and a fourth wire. Third wire is disposed on a first side of second inductor unit, and first side of second inductor unit corresponds to first side of first inductor unit. A second opening of third wire is disposed on a second side of stacking inductor device. Fourth wire is disposed on a second side of second inductor unit, and second side of second inductor unit corresponds to second side of first inductor unit.
Public/Granted literature
- US20190214185A1 STACKING INDUCTOR DEVICE Public/Granted day:2019-07-11
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