Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16677928Application Date: 2019-11-08
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Publication No.: US11244787B2Publication Date: 2022-02-08
- Inventor: Seung-Muk Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2019-0037085 20190329
- Main IPC: H01G4/10
- IPC: H01G4/10 ; H01G4/008 ; H01G4/14
Abstract:
A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.
Public/Granted literature
- US20200312552A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-10-01
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