Invention Grant
- Patent Title: Semiconductor manufacturing method and apparatus thereof
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Application No.: US16445674Application Date: 2019-06-19
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Publication No.: US11244827B2Publication Date: 2022-02-08
- Inventor: Yung-Yao Lee , Wen-Chih Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F1/38 ; G03F7/095 ; G03F1/70 ; H01L21/768 ; H01L21/033 ; H04B10/43 ; H01L31/12 ; G02B6/42 ; G01N21/956
Abstract:
The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.
Information query
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