Invention Grant
- Patent Title: Depletion mode semiconductor devices including current dependent resistance
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Application No.: US16502771Application Date: 2019-07-03
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Publication No.: US11244831B2Publication Date: 2022-02-08
- Inventor: Saptharishi Sriram , Yueying Liu
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Sage Patent Group
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L29/778 ; H01L29/20 ; H01L29/08 ; H01L21/265 ; H01L29/417 ; H01L29/423
Abstract:
A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.
Public/Granted literature
- US20190333767A1 DEPLETION MODE SEMICONDUCTOR DEVICES INCLUDING CURRENT DEPENDENT RESISTANCE Public/Granted day:2019-10-31
Information query
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