Invention Grant
- Patent Title: Semiconductor apparatus, power conversion device, and method for manufacturing semiconductor apparatus
-
Application No.: US16491276Application Date: 2017-06-21
-
Publication No.: US11244836B2Publication Date: 2022-02-08
- Inventor: Keitaro Ichikawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/022870 WO 20170621
- International Announcement: WO2018/235197 WO 20181227
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/29 ; H01L23/50

Abstract:
A semiconductor apparatus according to the invention of the present application includes a base plate, a lead frame having a first surface and a second surface being a surface opposite to the first surface, the second surface being bonded to an upper surface of the base plate, a semiconductor device provided on the first surface of the lead frame, and a mold resin covering the upper surface of the base plate, the lead frame, and the semiconductor device, wherein the mold resin is provided with a terminal insertion hole that extends from the surface of the mold resin to the lead frame and in which a press-fit terminal is inserted, and the lead frame is provided with an opening portion which intercommunicates with the terminal insertion hole and into which the press-fit terminal is press-fitted.
Public/Granted literature
- US20200303215A1 SEMICONDUCTOR APPARATUS, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS Public/Granted day:2020-09-24
Information query
IPC分类: