Invention Grant
- Patent Title: On integrated circuit (IC) device simultaneously formed capacitor and resistor
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Application No.: US16686942Application Date: 2019-11-18
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Publication No.: US11244850B2Publication Date: 2022-02-08
- Inventor: Jim Shih-Chun Liang , Baozhen Li , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: ZIP Group PLLC
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L49/02 ; H01L27/01

Abstract:
An IC device includes a simultaneously formed capacitor and resistor structure. The capacitor and resistor may be located between a Back End of the Line (BEOL) interconnect stack and an external device interconnect pad of the IC device. The resistor may be used to step down a voltage applied across the resistor. The resistor may include one or more resistor plates that are formed simultaneously with a respective one or more plates of the capacitor. For example, a capacitor plate and a resistor plate may be patterned and formed from the same conductive sheet. Each of the resistor plates may be connected to one or more vertical interconnect accesses (VIA).
Public/Granted literature
- US20210151345A1 ON INTEGRATED CIRCUIT (IC) DEVICE SIMULTANEOUSLY FORMED CAPACITOR AND RESISTOR Public/Granted day:2021-05-20
Information query
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