Invention Grant
- Patent Title: Semiconductor device and manufacturing method for semiconductor device
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Application No.: US16558482Application Date: 2019-09-03
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Publication No.: US11244875B2Publication Date: 2022-02-08
- Inventor: Yasutaka Shimizu
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-228965 20181206
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/00 ; H01L21/48 ; H01L23/08 ; H01L25/065
Abstract:
A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.
Public/Granted literature
- US20200185287A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2020-06-11
Information query
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