Invention Grant
- Patent Title: Semiconductor device structure with back-side layer to reduce leakage
-
Application No.: US17007233Application Date: 2020-08-31
-
Publication No.: US11244925B2Publication Date: 2022-02-08
- Inventor: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Hsun-Ying Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/324 ; H01L21/265 ; H01L25/065 ; H01L23/48 ; H01L29/10
Abstract:
The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The semiconductor substrate is thinned. Thinning the semiconductor substrate causes defects to form along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate. Dopants are implanted into the second side of the semiconductor substrate after thinning the semiconductor substrate. The semiconductor substrate is annealed to form a doped layer after implanting the dopants. The doped layer is formed along the second side of the semiconductor substrate.
Information query
IPC分类:
