Vertical transport field effect transistors (VTFET) are disclosed along with methods of making. The VTFET is made with a novel gate last replacement metal gate (RMG) process. The invention allows uniform and high doping levels without adversely affecting the gate region in the process. The distance from the S/D regions and the junctions are the same. Fin caps protect the fins and gate protecting hard mask protect the dummy gate material during the beginning process steps. The invention enables easy connection and increased surface area at the connection points to reduce contact resistance.