Invention Grant
- Patent Title: Multi-gate FinFET including negative capacitor, method of manufacturing the same, and electronic device
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Application No.: US17005097Application Date: 2020-08-27
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Publication No.: US11245035B2Publication Date: 2022-02-08
- Inventor: Huilong Zhu , Zhengyong Zhu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: CN201610082481.4 20160205
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/82 ; H01L21/8234 ; H01L27/12 ; H01L29/66 ; H01L21/84 ; H01L27/088 ; H01L29/10
Abstract:
A multi-gate FinFET including a negative capacitor connected to one of its gates, a method of manufacturing the same, and an electronic device comprising the same are disclosed. In one aspect, the FinFET includes a fin extending in a first direction on a substrate, a first gate extending in a second direction crossing the first direction on the substrate on a first side of the fin to intersect the fin, a second gate opposite to the first gate and extending in the second direction on the substrate on a second side of the fin opposite to the first side to intersect the fin, a metallization stack provided on the substrate and above the fin and the first and second gates, and a negative capacitor formed in the metallization stack and connected to the second gate.
Information query
IPC分类:
