Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16970567Application Date: 2019-02-21
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Publication No.: US11245040B2Publication Date: 2022-02-08
- Inventor: Shunpei Yamazaki , Katsuaki Tochibayashi , Satoru Okamoto
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2018-037162 20180302
- International Application: PCT/IB2019/051398 WO 20190221
- International Announcement: WO2019/166921 WO 20190906
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/22 ; H01L29/51
Abstract:
A semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a first conductor and a second conductor that are apart from each other over the first oxide; a second insulator covering the first insulator, the first oxide, the first conductor, and the second conductor; a third insulator over the second insulator; a fourth insulator in contact with a first conductor, a side surface of the second conductor, a side surface of the second insulator, and a side surface of the third insulator; a fifth insulator that is over the first oxide and on an inner side of the fourth insulator; a third conductor on an inner side of the fifth insulator; and a sixth insulator that is in contact with a top surface of the fourth insulator and over the third insulator, the fifth insulator, and the third conductor. The fourth insulator is divided to be apart from each other over the first oxide.
Public/Granted literature
- US20210119053A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-04-22
Information query
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