Invention Grant
- Patent Title: Method for manufacturing a donor substrate for making optoelectronic devices
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Application No.: US16487037Application Date: 2018-02-26
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Publication No.: US11245050B2Publication Date: 2022-02-08
- Inventor: David Sotta
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1751666 20170301
- International Application: PCT/FR2018/050446 WO 20180226
- International Announcement: WO2018/158529 WO 20180907
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L33/00 ; H01L21/02 ; H01L21/324
Abstract:
A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.
Public/Granted literature
- US20200013921A1 METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR MAKING OPTOELECTRONIC DEVICES Public/Granted day:2020-01-09
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