Invention Grant
- Patent Title: Method of producing microelectronic components with a layer structure
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Application No.: US16495913Application Date: 2018-03-21
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Publication No.: US11245052B2Publication Date: 2022-02-08
- Inventor: Sven Albert , René Boettcher , Alexander Boehm , Mike Lindner , Thomas Schmidt
- Applicant: 3D-Micromac AG
- Applicant Address: DE Chemnitz
- Assignee: 3D-Micromac AG
- Current Assignee: 3D-Micromac AG
- Current Assignee Address: DE Chemnitz
- Agency: DLA Piper LLP (US)
- Priority: DE102017205635.5 20170403
- International Application: PCT/EP2018/057192 WO 20180321
- International Announcement: WO2018/184851 WO 20181011
- Main IPC: H01L33/00
- IPC: H01L33/00 ; B32B43/00 ; H01L21/67 ; H01L21/683 ; H01L21/66

Abstract:
A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.
Information query
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