Invention Grant
- Patent Title: Switching element, variable resistance memory device, and method of manufacturing the switching element
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Application No.: US16944350Application Date: 2020-07-31
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Publication No.: US11245073B2Publication Date: 2022-02-08
- Inventor: Seung-Geun Yu , Zhu Wu , Ja Bin Lee , Jung Moo Lee , Jinwoo Lee , Kyubong Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2018-0105378 20180904
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
Public/Granted literature
- US2696171A Hydrodynamic coupling Public/Granted day:1954-12-07
Information query
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