Invention Grant
- Patent Title: Power amplifier circuit
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Application No.: US16828630Application Date: 2020-03-24
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Publication No.: US11245365B2Publication Date: 2022-02-08
- Inventor: Toshikazu Terashima , Satoshi Tanaka , Kazuo Watanabe , Makoto Itou , Jun Enomoto
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JPJP2019-055964 20190325
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/56 ; H03F1/02 ; H03F3/213 ; H03F3/19

Abstract:
A power amplifier circuit includes a first transistor, a capacitor, and a second transistor. The first transistor has an emitter electrically connected to a reference potential, a base, and a collector electrically connected to a first power supply potential. A first end of the capacitor is electrically connected to the collector of the first transistor. The second transistor has an emitter electrically connected to a second end of the capacitor and electrically connected to the reference potential, a base, and a collector electrically connected to the first power supply potential. An RF output signal obtained by amplifying the RF input signal is output from the collector of the second transistor. A second bias circuit includes a third transistor having a collector electrically connected to a second power supply potential, a base, and an emitter from which the second bias current or voltage is output.
Public/Granted literature
- US20200313629A1 POWER AMPLIFIER CIRCUIT Public/Granted day:2020-10-01
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