Invention Grant
- Patent Title: Amplifier for cutting leakage current and electronic device including the amplifier
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Application No.: US16727105Application Date: 2019-12-26
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Publication No.: US11245371B2Publication Date: 2022-02-08
- Inventor: Kihyun Kim , Hyunchul Park , Kyuhwan An , Jaesik Jang , Yunsung Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2018-0169185 20181226
- Main IPC: H03F3/72
- IPC: H03F3/72 ; H03F1/22 ; H03F1/02 ; H03F3/19

Abstract:
An electronic device including an amplifier which includes a first transistor configured to receive an input signal through a gate terminal thereof and having a source terminal electrically connected to ground, a second transistor configured to transmit an output signal through a drain terminal thereof and having a gate terminal electrically connected to the ground, and a switch electrically connected to the gate terminal of the second transistor and configured to switch a voltage being supplied to the gate terminal of the second transistor in accordance with turn-on or turn-off of the amplifier.
Public/Granted literature
- US20200212859A1 AMPLIFIER FOR CUTTING LEAKAGE CURRENT AND ELECTRONIC DEVICE INCLUDING THE AMPLIFIER Public/Granted day:2020-07-02
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