Invention Grant
- Patent Title: Semiconductor relay control device
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Application No.: US16842011Application Date: 2020-04-07
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Publication No.: US11247567B2Publication Date: 2022-02-15
- Inventor: Mitsuaki Morimoto , Eiichiro Oishi
- Applicant: Yazaki Corporation
- Applicant Address: JP Tokyo
- Assignee: Yazaki Corporation
- Current Assignee: Yazaki Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2017-215314 20171108
- Main IPC: B60L3/00
- IPC: B60L3/00 ; H02H7/20 ; H02J7/34 ; H03K17/687

Abstract:
An FET makes an upstream power supply circuit an energized state and makes the upstream power supply circuit an interrupted state. An FET makes a downstream power supply circuit an energized state and makes the downstream power supply circuit an interrupted state. An FET turns on to make an anode and a cathode of the capacitor an energized state, and turns off to make the anode and the cathode an interrupted state. A controller turns on the FET and the FET and turns off the FET to make a power supply circuit an energized state. When a certain discharge request is input in the energized state of the power supply circuit, the controller turns off the FET and turns on the FET and the FET. With this configuration, a semiconductor relay device can appropriately address the power supply circuit at the time of abnormality.
Public/Granted literature
- US20200231042A1 SEMICONDUCTOR RELAY CONTROL DEVICE Public/Granted day:2020-07-23
Information query
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