Invention Grant
- Patent Title: Process for thin film deposition through controlled formation of vapor phase transient species
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Application No.: US17151895Application Date: 2021-01-19
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Publication No.: US11248291B2Publication Date: 2022-02-15
- Inventor: Barry C. Arkles , Alain E. Kaloyeros
- Applicant: Gelest, Inc.
- Applicant Address: US PA Morrisville
- Assignee: Gelest, Inc.
- Current Assignee: Gelest, Inc.
- Current Assignee Address: US PA Morrisville
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Main IPC: C23C16/24
- IPC: C23C16/24 ; C23C16/16 ; C23C16/448 ; C23C16/452 ; C23C16/455 ; H01L21/285 ; C30B23/02 ; C30B25/02 ; C30B29/02 ; C30B29/06
Abstract:
A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.
Public/Granted literature
- US20210140036A1 PROCESS FOR THIN FILM DEPOSITION THROUGH CONTROLLED FORMATION OF VAPOR PHASE TRANSIENT SPECIES Public/Granted day:2021-05-13
Information query
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