Invention Grant
- Patent Title: Source gas supply apparatus, film forming apparatus, and source gas supply method
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Application No.: US16589410Application Date: 2019-10-01
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Publication No.: US11248296B2Publication Date: 2022-02-15
- Inventor: Satoshi Wakabayashi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-193767 20181012
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/52 ; C23C16/448 ; H01L21/205 ; H01L21/02 ; C23C16/455 ; B05B12/00

Abstract:
A source gas supply apparatus that supplies a source gas into a processing container, includes: a raw material container configured to contain a raw material, and to vaporize the raw material; a source gas supply flow path configured to supply the source gas including the vaporized raw material into the processing container; a flow rate measurement part installed in the source gas supply flow path, and configured to measure a flow rate of the source gas; a diluent gas supply flow path joining a downstream side of the flow rate measurement part in the source gas supply flow path, and configured to supply a diluent gas for diluting the source gas; and a gas mixer provided at a merging portion of the source gas supply flow path and the diluent gas supply flow path, and configured to mix the source gas with the diluent gas via a Venturi effect.
Information query
IPC分类: