Invention Grant
- Patent Title: Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment
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Application No.: US17052562Application Date: 2019-04-02
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Publication No.: US11248306B2Publication Date: 2022-02-15
- Inventor: Tsuyoshi Ohtsuki , Masaro Tamatsuka
- Applicant: SHIN-ETSU HANDOTAI CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2018-108344 20180606
- International Application: PCT/JP2019/014575 WO 20190402
- International Announcement: WO2019/235047 WO 20191212
- Main IPC: C25D11/02
- IPC: C25D11/02 ; C25D17/12 ; C25D11/32 ; C25D11/00

Abstract:
An anodic-oxidation equipment for forming a porous layer on a substrate to be treated, including: an electrolytic bath filled with an electrolytic solution; an anode and a cathode disposed in the electrolytic solution; and a power supply for applying current between the anode and the cathode in the electrolytic solution, wherein the anode is the substrate to be treated, and the cathode is a silicon substrate having a surface on which a nitride film is formed. This provides a cathode material in anodic-oxidation for forming porous silicon by an electrochemical reaction in an HF solution, the cathode material having a resistance to electrochemical reaction in an HF solution and no metallic contamination, etc., and furthermore, being less expensive than a conventional cathode material. Furthermore, high-quality porous silicon is provided at a lower cost than has been conventional.
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