Invention Grant
- Patent Title: Group III nitride substrate and method for producing group III nitride crystal
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Application No.: US15429167Application Date: 2017-02-10
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Publication No.: US11248310B2Publication Date: 2022-02-15
- Inventor: Yoshio Okayama
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2016-061042 20160325,JPJP2016-210870 20161027
- Main IPC: C30B29/40
- IPC: C30B29/40 ; C30B19/02 ; C30B19/12 ; C30B23/02 ; C30B25/18 ; C30B29/22
Abstract:
A Group III nitride substrate contains a base material part of a Group III nitride having a front surface and a back surface, the front surface of the base material part and the back surface of the base material part having different Mg concentrations from each other.
Public/Granted literature
- US20170275780A1 GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL Public/Granted day:2017-09-28
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