Invention Grant
- Patent Title: Energy recovery system for a semiconductor fabrication facility
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Application No.: US16522270Application Date: 2019-07-25
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Publication No.: US11248822B2Publication Date: 2022-02-15
- Inventor: Thomas Huang
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Main IPC: H01L21/67
- IPC: H01L21/67 ; F24H1/00

Abstract:
One illustrative energy recovery system disclosed herein includes a semiconductor fabrication facility (“fab”) and a closed chilled water loop including a chilled water stream delivered to the fab and a returning water stream that is received from the fab. In this example, the system also includes a primary heat exchanger having a first fluid side and a second fluid side, the first fluid side is adapted to receive supply water and the second fluid side is adapted to receive at least a portion of the returning return water stream, wherein the primary heat exchanger is adapted to effectuate heat transfer between the supply water flowing in the first fluid side and the returning water stream flowing in the second fluid side.
Public/Granted literature
- US20210025620A1 ENERGY RECOVERY SYSTEM FOR A SEMICONDUCTOR FABRICATION FACILITY Public/Granted day:2021-01-28
Information query
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