The present invention provides a method for accessing a flash memory module, wherein the flash memory module includes at least one flash memory chip, each flash memory chip includes a plurality of blocks, each clock includes a plurality of pages, and the method includes the steps of: providing a read-retry table, wherein the read-retry table includes a plurality of read setting levels, each read setting level corresponds to at least one read voltage, and no two read setting levels have the same read voltage; establishing a read success recording table, which records at least one specific read setting level that was previously used to successfully read the flash memory module; and when it is required to the read the flash memory module, using the at least one specific read setting level recorded in the read success recording table to read the flash memory module.