Invention Grant
- Patent Title: Semiconductor device having a bonding pad area of a first wiring layer overlaps a bonding pad electrode of a second wiring layer
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Application No.: US16984208Application Date: 2020-08-04
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Publication No.: US11251122B2Publication Date: 2022-02-15
- Inventor: Masayuki Akou , Mitsuhiro Noguchi , Yuuichi Tatsumi
- Applicant: Kioxia Corporation
- Applicant Address: JP Minato-ku
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-197445 20191030
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/11526 ; H01L27/11573 ; H01L25/18 ; H01L23/00

Abstract:
A semiconductor device includes: wiring layers laminated in a first direction and including conducting members; and a second wiring layer including a bonding pad electrode. The first wiring layers each include a bonding pad area. The bonding pad area overlaps with the bonding pad electrode viewed in the first direction. The conducting member is absent in an area inside a first imaginary circle with a first point as a midpoint in the bonding pad area. The conducting members are disposed in an area outside a second imaginary circle in the bonding pad area. The second imaginary circle has the first point as a midpoint and has a radius equal to or more than a radius of the first imaginary circle. When the radius of the first imaginary circle is denoted as R1 and the radius of the second imaginary circle is denoted as R2, R2/R1 is smaller than 1/cos(π/4).
Public/Granted literature
- US20210134713A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-05-06
Information query
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