Invention Grant
- Patent Title: Staggered stacked vertical crystalline semiconducting channels
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Application No.: US16821604Application Date: 2020-03-17
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Publication No.: US11251182B2Publication Date: 2022-02-15
- Inventor: Tsung-Sheng Kang , Tao Li , Ardasheir Rahman , Praveen Joseph , Indira Seshadri , Ekmini Anuja De Silva
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Randall Bluestone
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/78 ; H01L21/8238 ; H01L27/12 ; H01L29/06 ; H01L21/02 ; H01L29/66
Abstract:
A semiconductor structure includes a first semiconducting channel having a plurality of vertical nanowires and a second semiconducting channel having a plurality of vertical nanowires. The first semiconducting channel and the second semiconducting channel are configured to be in a stacked configuration. The plurality of vertical nanowires of the first semiconducting channel are configured to be in alternating positions relative to the plurality of vertical nanowires of the second semiconducting channel.
Public/Granted literature
- US20210296314A1 STAGGERED STACKED VERTICAL CRYSTALLINE SEMICONDUCTING CHANNELS Public/Granted day:2021-09-23
Information query
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