Invention Grant
- Patent Title: Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
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Application No.: US16553912Application Date: 2019-08-28
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Publication No.: US11251285B2Publication Date: 2022-02-15
- Inventor: Ruqiang Bao , Hemanth Jagannathan , Paul C. Jamison , ChoongHyun Lee
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Robert Sullivan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/786 ; H01L29/423 ; H01L21/324 ; H01L21/02 ; H01L29/49
Abstract:
A method of forming a vertical fin field effect transistor device, including, forming one or more vertical fins with a hardmask cap on each vertical fin on a substrate, forming a fin liner on the one or more vertical fins and hardmask caps, forming a sacrificial liner on the fin liner, and forming a bottom spacer layer on the sacrificial liner.
Public/Granted literature
- US20200013877A1 APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES Public/Granted day:2020-01-09
Information query
IPC分类:
