A thin-film transistor, method of manufacturing the same, and a display apparatus are provided. The thin-film transistor includes a first active layer, a source, a drain, a gate, and a second active layer, the source, the drain, the gate are disposed on the first active layer with spacing, the gate is located between the source and the drain, the second active layer is disposed on the gate, the source, and the drain, the source and the drain are both respectively connected to the first active layer and the second active layer, and the gate is respectively insulated from the first active layer, the second active layer, the source, and the drain. When a voltage is applied to the gate, the source and the drain may be conducting via the first and second active layer. Therefore, a larger current may flow between the source and the drain.