Invention Grant
- Patent Title: High blocking temperature spin orbit torque electrode
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Application No.: US15942231Application Date: 2018-03-30
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Publication No.: US11251365B2Publication Date: 2022-02-15
- Inventor: Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Ian Young , Kevin O'Brien , Gary Allen , Noriyuki Sato
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L43/10
- IPC: H01L43/10 ; G11C11/16 ; H01L27/22 ; H01L43/04 ; H01L43/06 ; H01L43/14 ; B82Y25/00

Abstract:
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.
Public/Granted literature
- US20190305216A1 HIGH BLOCKING TEMPERATURE SPIN ORBIT TORQUE ELECTRODE Public/Granted day:2019-10-03
Information query
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