Invention Grant
- Patent Title: High-frequency front-end circuit
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Application No.: US16797114Application Date: 2020-02-21
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Publication No.: US11251757B2Publication Date: 2022-02-15
- Inventor: Masahiro Ito
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JPJP2019-034938 20190227
- Main IPC: H03F3/195
- IPC: H03F3/195 ; H03F1/56 ; H03F3/21

Abstract:
A high-frequency front-end circuit includes a plurality of power amplifiers. Power supply inductors and matching inductors for the power amplifiers are formed of conductors disposed on a substrate. The power supply inductors and the matching inductors are disposed on or in different layers. When the substrate is seen in a plan view, at least a portion of the first power supply inductor and at least a portion of the second matching inductor overlap each other with an insulating layer interposed therebetween.
Public/Granted literature
- US20200274503A1 HIGH-FREQUENCY FRONT-END CIRCUIT Public/Granted day:2020-08-27
Information query
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