This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.