Invention Grant
- Patent Title: Method for encapsulating a microelectronic device, comprising a step of thinning the substrate and/or the encapsulation cover
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Application No.: US16965524Application Date: 2019-01-24
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Publication No.: US11254567B2Publication Date: 2022-02-22
- Inventor: Messaoud Bedjaoui , Raphael Salot
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1850735 20180130
- International Application: PCT/FR2019/050153 WO 20190124
- International Announcement: WO2019/150019 WO 20190808
- Main IPC: B81C1/00
- IPC: B81C1/00 ; H01L23/29
Abstract:
A method for encapsulating a microelectronic device, arranged on a support substrate, with an encapsulation cover includes, inter alia, the following sequence of steps: a) providing a support substrate on which a microelectronic device is arranged, b) depositing a bonding layer on the first face of the substrate, around the microelectronic device, c) positioning an encapsulation cover on the bonding layer in such a way as to encapsulate the microelectronic device, d) thinning the second main face of the support substrate and the second main face of the encapsulation cover by chemical etching.
Public/Granted literature
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