Invention Grant
- Patent Title: Cobalt precursor and methods for manufacture using the same
-
Application No.: US16702791Application Date: 2019-12-04
-
Publication No.: US11254698B2Publication Date: 2022-02-22
- Inventor: Soyoung Lee , Hiroshi Nihei , Takamasa Miyazaki , Yousuke Satou , Kouhei Sugimoto , Masashi Shirai , Jaesoon Lim , Younsoo Kim , Younjoung Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0047222 20190423
- Main IPC: C23C16/18
- IPC: C23C16/18 ; H01L21/02 ; H01L21/3213 ; C07F15/06 ; C23C16/455
Abstract:
The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.
Public/Granted literature
- US20200339618A1 COBALT PRECURSOR AND METHODS FOR MANUFACTURE USING THE SAME Public/Granted day:2020-10-29
Information query
IPC分类:
