- Patent Title: Polishing slurry and method of manufacturing semiconductor device
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Application No.: US16750060Application Date: 2020-01-23
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Publication No.: US11254840B2Publication Date: 2022-02-22
- Inventor: Kenji Takai , Eigo Miyazaki , Do Yoon Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2019-0028738 20190313
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/321 ; H01L21/768
Abstract:
A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.
Public/Granted literature
- US20200291268A1 POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-09-17
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