Invention Grant
- Patent Title: Film resist and method of manufacturing semiconductor device
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Application No.: US16179150Application Date: 2018-11-02
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Publication No.: US11256171B2Publication Date: 2022-02-22
- Inventor: Hiroyuki Nakamura , Shinya Soneda , Shoichi Kuga
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-019822 20180207
- Main IPC: G03F7/09
- IPC: G03F7/09 ; H01L23/544 ; H01L21/027 ; G03F7/20 ; G03F7/26 ; G03F1/42 ; G03F9/00
Abstract:
A film resist is a member for being bonded to a main surface of a substrate, which main surface is provided with a mark. The film resist includes a cutout for the mark to be checked.
Public/Granted literature
- US20190243245A1 FILM RESIST AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-08-08
Information query
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