A memory device is provided. The memory device comprises at least one word line driver comprising a first and a second switching device, wherein the word line driver is configured to activate a word line electrically coupled to one or more memory cells included in a memory bank. The memory device additionally comprises a memory bank controller operatively coupled to the at least one word line driver. The memory bank controller is configured to provide a word line power supply (PH) signal, a word line ON control (GR) signal, and a word line OFF control (PHF) signal to the at least one word line driver, and to adjust a timing of the PH, the GR, and the PHF signals to reduce or to eliminate a non-conducting stress (NCS) condition, a time dependent temperature instability (TDDB) condition, or a combination thereof, of the first switching device, of the second switching device, or of a combination thereof.