Invention Grant
- Patent Title: Semiconductor module and semiconductor device
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Application No.: US16310677Application Date: 2016-11-15
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Publication No.: US11257732B2Publication Date: 2022-02-22
- Inventor: Maki Hasegawa , Shuhei Yokoyama , Shogo Shibata , Shigeru Mori , Toru Iwagami
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/083801 WO 20161115
- International Announcement: WO2018/092185 WO 20180524
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/495 ; H01L23/48 ; H01L23/433 ; H01L23/29
Abstract:
A semiconductor module includes: a semiconductor element; a first lead frame including a first portion on which the semiconductor element is mounted; a sealing member sealing the semiconductor element and the first portion; and a heat dissipation member which is integrated with the sealing member and dissipates heat generated in the semiconductor element. The heat dissipation member is insulated from the semiconductor element and the first portion by the sealing member. Therefore, the semiconductor module that is applicable to vertical semiconductor elements and ensures electrical insulation between the semiconductor element and the heat dissipation member when implementing the semiconductor module onto a circuit board, can be provided.
Public/Granted literature
- US20190259681A1 SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE Public/Granted day:2019-08-22
Information query
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