Invention Grant
- Patent Title: Semiconductor device and power conversion device
-
Application No.: US16754712Application Date: 2017-12-13
-
Publication No.: US11257768B2Publication Date: 2022-02-22
- Inventor: Yuji Imoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/044652 WO 20171213
- International Announcement: WO2019/116457 WO 20190620
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L23/373 ; H01L23/50 ; H02M7/5387 ; H02P27/08

Abstract:
The object is to provide a technique that can prevent cracks from appearing in an undesirable portion in a resin. A semiconductor device includes an electronic circuit including a semiconductor element, a metal electrode directly connected to the electronic circuit, and an encapsulation resin. The encapsulation resin encapsulates the electronic circuit and the metal electrode. An end portion of the metal electrode on a surface opposite to a surface facing the electronic circuit is acute-shaped, and an end portion of the metal electrode on the surface facing the electronic circuit is arc-shaped or obtuse-shaped.
Public/Granted literature
- US20200251425A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2020-08-06
Information query
IPC分类: